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PRODUCT DESCRIPTION:
This series employs the Schottky Barrier principle in a large area metal?to?silicon power diode. State?of?the?art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low?voltage, high?frequency inverters, free wheeling diodes, and polarity protection diodes. Guard Ring Die Construction for Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application
This seller has been a member since: Nov. 24, 2015
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Total Classifieds: 1021
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